The 2SC1124 is engineered to balance high breakdown voltages with high-frequency capabilities. Below is the foundational specification set extracted from standard technical datasheets: NPN Bipolar Junction Transistor (BJT) Collector-Base Voltage ( VCBOcap V sub cap C cap B cap O end-sub ): 160V maximum Collector-Emitter Voltage ( VCEOcap V sub cap C cap E cap O end-sub ): 140V maximum Emitter-Base Voltage ( VEBOcap V sub cap E cap B cap O end-sub ): 5V maximum Continuous Collector Current ( ICcap I sub cap C ): 1A maximum Collector Power Dissipation ( PCcap P sub cap C ): 5W (when paired with an adequate heatsink) Transition Frequency ( fTf sub cap T ): 120 MHz to 140 MHz Minimum DC Current Gain ( hFEh sub cap F cap E end-sub ): 50 Physical Package Variations and Pin Configuration
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| Parameter | Symbol | Rating | Unit | | :--- | :--- | :--- | :--- | | Collector-Base Voltage | $V_CBO$ | 50 | V | | Collector-Emitter Voltage | $V_CEO$ | 40 | V | | Emitter-Base Voltage | $V_EBO$ | 5 | V | | Collector Current | $I_C$ | 1.0 | A | | Power Dissipation | $P_C$ | 0.8 | W | | DC Current Gain | $h_FE$ | 40 - 240 | | | Transition Frequency | $f_T$ | 150 | MHz | The 2SC1124 is engineered to balance high breakdown
Drives the cathode-ray tube (CRT) electron guns, requiring rapid voltage swings across a 150V rail. | Parameter | Symbol | Rating | Unit
), it was often utilized in broadcast equipment and radio receivers where high-frequency signals needed amplification without phase degradation. 3. How to Find a "Better" Modern Equivalent
For the (flat face, leads down, left to right):